STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 description the stc6506 is the dual p-channel enhancement mode power field effect t ransistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide s uperior switching performance. these devices are particularly suited for low voltag e application, such as notebook computer power management and other battery powered circuits wher e high-side switching, low in-line power loss, and resistance to transients are needed. pin configuration tsop-6 y: year a: produces code pchannel pchannel feature 30v/2.8a, r ds(on) =105mohm@vgs=10v 30v/2.5a, r ds(on) =135mohm@vgs= 4.5v super high density cell design for extremely low r ds(on) exceptional anresistance and maximum dc current capability tsop6p package design 06 yw d1 s1 d2 g1 s2 g2
STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage v dss 30 v gatesource voltage v gss 20 v continuous drain current (t j =150 ) t a =25 i d 2.8 a t a =70 2.1 pulsed drain current i dm 8 a continuous source current (diode conduction) i s 1.4 a power dissipation t a =25 p d 1.15 w t a =70 0.75 operation junction temperature t j 55/150 storage temperature range t stg 55/150 thermal resistancejunction to ambient t Q 10sec r ja 50 52 /w steady state 90 90
STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol conditions min typ max unit drainsource breakdown voltage v (br)dss v gs =0v,i d =250ua 30 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 1 3 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =24v,v gs =0v 1 ua v ds =24v,v gs =0v t j =55 10 onstate drain current i d(on) v ds Q 5v,v gs =10v 6 a drainsource onresistance r ds(on) v gs =10v,i d =2.8a 0.088 0.103 v gs =4.5v,i d =2.5a 0.110 0.132 forward transconductance g fs v ds =10v,i d =2.8a 4.0 s diode forward voltage v sd i s =1.2a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 5.8 10 nc gatesource charge q gs 0.8 gatedrain charge q gd 1.5 input capacitance ciss v ds =15v,v gs =0v, f=1mhz 226 output capacitance coss 87 reverse transfer capacitance crss 19 turnon time t d(on) v dd =15v, r l =15, v gen =10v, r g =6 i d =1.0a 9 20 ns t r 9 20 turnoff time t d(off) 18 35 t f 6 20 v ds =15v,v gs =10v, v ds =1.7a
STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 typical characterictics
STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 typical characterictics
STP6506 dual p channel enhancement mode mosfet 2.8a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com STP6506 2010. v1 tsop-6 package outline
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